GERMANIUM - AN OVERVIEW

≤ 0.15) is epitaxially developed over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and then the framework is cycled via oxidizing and annealing levels. Due to preferential oxidation of Si around Ge [68], the initial Si1–Publisher's Observe: Springer Nature continues to be neutral with regards to jurisdictional claims in p